| 摘要 |
992,499. Semi-conductor devices. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. May 22, 1962 [May 25, 1961], No. 19666/62. Heading H1K. In a process for alloying material to a semiconductor body, the body and alloying material are supplied to a preheated jig of large thermal capacity. Figs. 1 and 2 show apparatus for alloying pellets of impurity material to a semiconductor body. The semi-conductor body 23 is held in a graphite or steel jig 19 which is surrounded by a heater member 17. The body 23 is first placed in a carrier plate 44 (Fig. 3) which slides in a guide channel 27 extending across base-plate 1. Stamp member 31 situated in the guide channel is raised by means of lever 37 to lift the carrier plate 44 so that the semiconductor body is placed in position in jig 19 where it is retained by suction. Stamp member 31 is then lowered and another carrier plate 44 which contains an impurity pellet held in position by means of a perforated mica strip, is slid into position above stamp 31 which is again raised so that the impurity pellet engages and is alloyed to the semi-conductor body. The suction is then released so that the semiconductor body falls into position on the carrier plate 44 which is moved along the guide channel to the end position. Alloying takes place in a nitrogen or nitrogen and hydrogen atmosphere in the enclosure formed by glass tube 7. The semi-conductor may consist of silicon or germanium. Two or more pellets and/or two or more bodies may be supplied simultaneously from the carrier plate to the jig. Pressure may be applied during alloying by means of a spring associated with stamp 31. |
