Semiconductor device manufacture by selectively forming insulating layer and conducting layers to form vertical connection

摘要

The method involves removing an oxide film (21c) in a region including a fuse region (26) while forming an opening for the formation of a vertical connection (22c) in an oxide film (21c) that serves an upper insulating layer. The vertical connection is formed to simultaneously electrically connect the connection layers (23b,23c) below and above the oxide film and the connection layer (23c) arranged on one upper side of the oxide film in the form of an upper conductive layer (25). An Independent claim is also included for a semiconductor device.