发明名称 |
Multi-beam exposure apparatus using a multi-axis electron lens, fabrication method of a semiconductor device |
摘要 |
An electron beam exposure apparatus for exposing a wafer includes: a multi-axis electron lens operable to converge a plurality of electron beams independently of each other; and a lens-intensity adjuster including a substrate provided to be substantially parallel to the multi-axis electron lens, and a lens-intensity adjusting unit operable to adjust the lens intensity of the multi-axis electron lens applied to the electron beams passing through the lens openings, respectively.
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申请公布号 |
US2001028046(A1) |
申请公布日期 |
2001.10.11 |
申请号 |
US20010824880 |
申请日期 |
2001.04.04 |
申请人 |
HAMAGUCHI SHINICHI;HARAGUCHI TAKESHI;YASUDA HIROSHI |
发明人 |
HAMAGUCHI SHINICHI;HARAGUCHI TAKESHI;YASUDA HIROSHI |
分类号 |
G03F7/20;H01J37/317;(IPC1-7):G21K5/10;H01J37/08 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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