发明名称 Multi-beam exposure apparatus using a multi-axis electron lens, fabrication method of a semiconductor device
摘要 An electron beam exposure apparatus for exposing a wafer includes: a multi-axis electron lens operable to converge a plurality of electron beams independently of each other; and a lens-intensity adjuster including a substrate provided to be substantially parallel to the multi-axis electron lens, and a lens-intensity adjusting unit operable to adjust the lens intensity of the multi-axis electron lens applied to the electron beams passing through the lens openings, respectively.
申请公布号 US2001028046(A1) 申请公布日期 2001.10.11
申请号 US20010824880 申请日期 2001.04.04
申请人 HAMAGUCHI SHINICHI;HARAGUCHI TAKESHI;YASUDA HIROSHI 发明人 HAMAGUCHI SHINICHI;HARAGUCHI TAKESHI;YASUDA HIROSHI
分类号 G03F7/20;H01J37/317;(IPC1-7):G21K5/10;H01J37/08 主分类号 G03F7/20
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