发明名称 |
Semiconductor device, method for fabricating the same and method for fabricating semiconductor substrate |
摘要 |
A first semiconductor layer is epitaxially grown on a semiconductor substrate and patterned to form concave and convex portions. A second semiconductor layer is formed on the first semiconductor layer using a top epitaxial mask covering the top surface of the convex portion. Lattice defects D propagating from the first semiconductor layer exist only in a region located above the center of the concave portion (a defect region Ra), while in the other region (a low defect region Rb) lattice defects D propagating from the first semiconductor layer hardly exist.
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申请公布号 |
US2001029086(A1) |
申请公布日期 |
2001.10.11 |
申请号 |
US20010790908 |
申请日期 |
2001.02.23 |
申请人 |
OGAWA MASAHIRO;ORITA KENJI;ISHIDA MASAHIRO;NAKAMURA SHINJI;IMAFUJI OSAMU;YURI MASAAKI |
发明人 |
OGAWA MASAHIRO;ORITA KENJI;ISHIDA MASAHIRO;NAKAMURA SHINJI;IMAFUJI OSAMU;YURI MASAAKI |
分类号 |
H01L21/20;H01L33/00;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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