发明名称 |
INDUCTIVELY COUPLED PLASMA ETCHING APPARATUS |
摘要 |
An inductively coupled plasma etching apparatus includes a chamber (100) for generating a plasma therein. The chamber (100) is defined by walls of a housing. A coil (313) for receiving high frequency (RF) power is disposed adjacent to and outside of one of the walls (101) of the housing. A metal plate (217) is disposed adjacent to and outside of the wall (101) of the housing that the coil (313) is disposed adjacent to. The metal plate (217) is positioned in a spaced apart relationship between the coil (313) and the wall (101) of the housing and has radial slits formed therein that extend transversely to the coil (313). A connector (207) electrically connects the metal plate (217) to the coil (313). A method for controlling an inner surface of a wall defining a chamber in which a plasma is generated is also described.
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申请公布号 |
WO0175931(A2) |
申请公布日期 |
2001.10.11 |
申请号 |
WO2001US10335 |
申请日期 |
2001.03.28 |
申请人 |
LAM RESEARCH CORPORATION;NAKAJIMA, SHU |
发明人 |
NAKAJIMA, SHU |
分类号 |
H01J37/32;(IPC1-7):H01J37/32 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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