| 发明名称 |
Method of forming high dielectric constant thin film and method of manufacturing semiconductor device |
| 摘要 |
A method of forming a (Ba, Sr) TiO3 high dielectric constant thin film with sufficient coverage is provided. A Ba material, an Sr material and a Ti material including bis (t-butoxy) bis (dipivaloylmethanate) titanium are dissolved in an organic solvent to obtain a solution material. The solution material is vaporized, so that material gas is obtained. A (Ba, Sr) TiO3 thin film is formed on a substrate by CVD reaction using the material gas.
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| 申请公布号 |
US2001029090(A1) |
申请公布日期 |
2001.10.11 |
| 申请号 |
US20010832928 |
申请日期 |
2001.04.12 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KAWAHARA TAKAAKI;YAMAMUKA MIKIO;HORIKAWA TSUYOSHI;TARUTANI MASAYOSHI;SATO TAKEHIKO;MATSUNO SHIGERU |
| 分类号 |
H01L21/31;C23C16/40;H01L21/02;H01L21/314;H01L21/316;H01L21/8242;H01L27/108;(IPC1-7):H01L21/38;H01L21/22 |
主分类号 |
H01L21/31 |
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