SEMICONDUCTOR ENERGY DETECTOR

摘要

A photodiode array (1) includes P<+> diffused layers (4, 5), N<+> channel stop layers (6, 7), and an N<+> diffused layer (8). P<+> diffused layers (4, 5) and N<+> channel stop layers (6, 7) are formed on the back of a semiconductor substrate (3). The N<+> channel stop layer (6) is formed between the adjacent P<+> diffused layers (4, 5), and it has a grid pattern to separate the P<+> diffused layers (4, 5). The N<+> channel stop layer (7) has a frame pattern continuing from N<+> channel stop layer (6) outside the P<+> diffused layer (5). The N<+> channel stop layer (7) is wider than the N<+> channel stop layer (6). A scintillator is connected optically to the front side of the semiconductor substrate (3).