发明名称 METHOD AND APPARATUS FOR PHYSICAL GROWING OF DEPOSITED FILM IN VAPOR PHASE USING MODULATED POWER SOURCE
摘要 PROBLEM TO BE SOLVED: To provide a method and a apparatus for achieving the conformal, step coverage on a substrate by an ionized metal plasma deposition. SOLUTION: A target 104 provided a source of a material to be sputtered and ionized by the plasme generated by a coil 122. The ionized material is deposited on the substrate 110 biased to the negative voltage. A power source connected to the target varies by the modulated or time-fluctuated signal during the treatment. The modulated signal includes preferably a negative and positive voltage. The negative and positive voltage are switched alternately, and the sputtering step is repeated between in a center and in an edge. The quality and uniformity of the film can be controlled by adjusting the frequency and amplitude of the signal, the duration time of the positive signal, the power supplied to a supporting member 112 and a coil, and other process parameters.
申请公布号 JP2001279436(A) 申请公布日期 2001.10.10
申请号 JP20000349859 申请日期 2000.11.16
申请人 APPLIED MATERIALS INC 发明人 CHIANG TONY P;DING PEIJUN;CHIN BARRY
分类号 C23C14/34;C23C14/35;H01J37/34;H01L21/203;H01L21/285;(IPC1-7):C23C14/34 主分类号 C23C14/34
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