| 摘要 |
<p>The integrated device (100) comprises a PMOS transistor (101) and a voltage selector (1) having an output (6g) connected to the bulk terminal (101d) of the PMOS transistor (101). The voltage selector (1) comprises an input stage (2) supplying (2c) a supply voltage (Vdd) or a programming voltage (Vpp) according to whether the device (100) is in a reading step or in a programming step; a comparator (3) connected to the output (2c) of the input stage (2), receiving a boosted voltage (Vboost), and generating (3g) a first control signal (OC), the state whereof depends upon the comparison of the voltages at the inputs of the comparator (3); a logic circuit (4) connected to the output (3g) of the comparator (3) and generating a second control signal (VDDIS), the state whereof depends upon the state of the first control signal (OC) and of a third-level signal (VTL); and a switching circuit (6) controlled by the first control signal (OC), by the second control signal (VDDIS), and by the third-level signal (VTL) and supplying (6g) each time the highest among the supply voltage (Vdd), the boosted voltage (Vboost), and the programming voltage (Vpp). <IMAGE></p> |
