发明名称 PRODUCTION METHOD OF FERROELECTRIC THIN FILM
摘要 <p>PROBLEM TO BE SOLVED: To produce a ferroelectric thin film in which the crystal grain size in the surface is small and uniform, and columnar crystal grains are generated by a solution coating method. SOLUTION: A raw material solution for a ferroelectric thin film in which butoxyethanol is used as a solvent, contains lead acetate, zirconium acetylacetonato and titanium tetraisopropoxide, a crack preventive and a coordination stabilizer are added to the solution. The raw material solution is applied dried and heated to crystallize by every one layer. By repeating of these processes, the ferroelectric thin film is produced.</p>
申请公布号 JP2001279464(A) 申请公布日期 2001.10.10
申请号 JP20000092505 申请日期 2000.03.29
申请人 SEIKO EPSON CORP 发明人 HAMADA YASUAKI;HASEGAWA KAZUMASA;TAMURA HIROAKI
分类号 C01G25/00;C23C26/00;H01L41/18;H01L41/317;H01L41/39;H01L41/43;(IPC1-7):C23C26/00;H01L41/24 主分类号 C01G25/00
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