发明名称 METHOD OF PREPARING FERROELECTRIC THIN FILM AND DEVICE FOR PREPARING SAME
摘要 <p>PROBLEM TO BE SOLVED: To provide a method and a device to prepare thin ferroelectric film with improved fatigue characteristic and reduced deterioration of ferroelectric crystal structure due to the membrane stress generating in the heating stage and accumulated in the substrate at the crystallization of the membrane. SOLUTION: This method consists in heating and crystallizing the ferroelectric thin film laminated to the substrate in the deformed state by pressing down the substrate at the central part. By adjusting the amount of press- down, membrane stress applied to the ferroelectric thin film can be controlled as desired resulting in the improvement of the crystal structure.</p>
申请公布号 JP2001278622(A) 申请公布日期 2001.10.10
申请号 JP20000095752 申请日期 2000.03.30
申请人 SEIKO EPSON CORP 发明人 KUNO TADAAKI;NATORI EIJI
分类号 C01G1/00;C23C14/08;C23C14/35;H01L21/822;H01L27/04;H01L41/18;H01L41/187;H01L41/39;H01L41/43;(IPC1-7):C01G1/00;H01L41/24 主分类号 C01G1/00
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