发明名称 METHOD FOR CORRECTING PHOTOMASK PATTERN, METHOD FOR MANUFACTURING PHOTOMASK AND RECORDING MEDIUM
摘要 <p>PROBLEM TO BE SOLVED: To shorten the processing time for photo proximity effect correction and to suppress an increase of TATs in formation of pattern data even if the variations in the line widths and base widths of photomask patterns increase. SOLUTION: When graphic data is subjected to correction processing by using a correction table comprising a hash table and having correction values, the inputted graphic data 1 is subjected to segment vectorization processing (ST2) and segment sorting processing (ST3). The segmentalized graphic data 1 is scanned with scanning lines and the line widths and space widths for correction are extracted by a plane scanning method. The segments sandwiched by the front and rear scanned with the scanning lines are subjected to the retrieval of a desired correction value from the correction table using a hash function in accordance with the values of the line widths and space widths. The segments sandwiched by the front and rear scanned with the scanning lines in the graphic data 1 are subjected to the correction and the correction of the graphic data 1 is executed in the final.</p>
申请公布号 JP2001281836(A) 申请公布日期 2001.10.10
申请号 JP20000093384 申请日期 2000.03.30
申请人 SONY CORP 发明人 TAKENOUCHI TAKASHI
分类号 G03F1/36;G03F1/68;G03F1/70;G06F17/50;H01L21/027;(IPC1-7):G03F1/08 主分类号 G03F1/36
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