发明名称 Process for producing a planar body of an oxide single crystal
摘要 A planar body with a good crystallinity is grown continuously and stably when a planar body of an oxide single crystal is grown by a micro pulling-down method. A raw material of the oxide single crystal is melted in a crucible 7. A fibrous seed crystal 15 is contacted to a melt 18, and then the melt 18 is pulled down from an opening 13c of the crucible 7 by lowering the seed crystal. A shoulder portion 14A is produced following the seed crystal, and a planar body 14B is produced following the shoulder portion. In this case, differences in lattice constants between each crystal axis of the seed crystal and each corresponding crystal axis of the shoulder portion are controlled at 1% or less, respectively.
申请公布号 EP1143041(A1) 申请公布日期 2001.10.10
申请号 EP20010302033 申请日期 2001.03.06
申请人 NGK INSULATORS, LTD. 发明人 IMAI, KATSUHIRO;HONDA, AKIHIKO;IMAEDA, MINORU
分类号 C30B15/00;C30B15/08;C30B29/22 主分类号 C30B15/00
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