| 发明名称 |
PHASE SHIFT MASK BLANK AND PRODUCTION METHOD THEREFOR |
| 摘要 |
The present invention is concerned with a phase-shift mask blank having a light semi-transmitting film which at least contains a transition metal selected from tungsten, tantalum, chromium or titanium, silicon and nitrogen on a transparent substrate, the light semi-transmitting film containing 5 to 70 at% of nitrogen, and an excellent phase-shift mask can be obtained by patterning the light semi-transmitting film of the phase-shift mask blank of the present invention since the light semi-transmitting film has a small surface roughness (nmRa). <IMAGE> |
| 申请公布号 |
EP0788027(B1) |
申请公布日期 |
2001.10.10 |
| 申请号 |
EP19950925991 |
申请日期 |
1995.07.19 |
| 申请人 |
HOYA CORPORATION |
发明人 |
MITSUI, HIDEAKI;MATSUMOTO, KENJI;YAMAGUCHI, YOICHI |
| 分类号 |
F02G5/00;F02M45/04;F02M47/00;F02M47/02;F02M51/06;F02M57/02;F02M59/10;F02M59/36;F02M59/46;F02M63/00;G03F1/00;G03F1/32;G03F1/68;H01L21/027 |
主分类号 |
F02G5/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
