| 摘要 |
PROBLEM TO BE SOLVED: To suppress fluctuation of an offset voltage of a semiconductor pressure sensor. SOLUTION: Related to a semiconductor pressure sensor, a conductive layer 50 is provided on an oxide film 40 on gauge resistance parts 111-114 and lead parts 121-125 where impurity is implanted or dispersed, which is connected to a lowest electric potential of a circuit system. Thus, the positive ions in the oxide film are suppressed from dispersed in the oxide film 40 under temperature change and the like. Since, with this configuration, a resistance change of the gauge resistance parts 111-114 and the lead parts 121-125 caused by distribution change of positive ion in the oxide film 40 in use is suppressed, the fluctuation of the offset voltage of the semiconductor pressure sensor 100 is suppressed. Hydrogen ions and the like in the oxide film 40 are attracted to a conductive layer 50 side in advance, if, at manufacturing of the semiconductor pressure sensor 100, the conductive layer 50 is allowed to be negative electric- potential to the circuit system for high-temperature bias process. Thus dispersion of positive ions, at use, in the oxide film 40 due to temperature change and the like is further suppressed.
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