<p>There is provided a film forming method of forming a silicon-containing insulating film 204 on a deposited substrate 103 by reacting a compound having siloxane bonds and Si-R bonds (R is alkyl group) with a plasmanized reaction gas containing an oxidizing gas and H2. <IMAGE></p>
申请公布号
EP1143499(A2)
申请公布日期
2001.10.10
申请号
EP20010107804
申请日期
2001.04.05
申请人
CANON SALES CO., INC.;SEMICONDUCTOR PROCESS LABORATORY CO., LTD.
