发明名称 OUTPUT BUFFER CIRCUIT FOR ELECTROSTATIC DISCHARGE PROTECTION IN SEMICONDUCTOR DEVICE
摘要 PURPOSE: An output buffer circuit for electrostatic discharge protection in a semiconductor device is provided to prevent a damage of a semiconductor device due to electrostatic discharge by forming an anti-electrostatic circuit. CONSTITUTION: An output buffer(10) is formed with drive transistors connected with internal signals. An anti-electrostatic circuit(20) is formed with anti-electrostatic transistors. The output buffer(10) and the anti-electrostatic circuit(20) are formed with transistors of different types, respectively. The output buffer(10) has a pull-up transistor and a pull-down transistor connected between the first supply voltage and the second supply voltage. The anti-electrostatic transistors of the anti-electrostatic circuit(20) has a breakdown voltage lower than the breakdown voltage of the transistors of the output buffer.
申请公布号 KR100312621(B1) 申请公布日期 2001.10.10
申请号 KR19940026195 申请日期 1994.10.13
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, BYEONG JIN
分类号 H03K19/00;(IPC1-7):H03K19/00 主分类号 H03K19/00
代理机构 代理人
主权项
地址