发明名称 |
OUTPUT BUFFER CIRCUIT FOR ELECTROSTATIC DISCHARGE PROTECTION IN SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: An output buffer circuit for electrostatic discharge protection in a semiconductor device is provided to prevent a damage of a semiconductor device due to electrostatic discharge by forming an anti-electrostatic circuit. CONSTITUTION: An output buffer(10) is formed with drive transistors connected with internal signals. An anti-electrostatic circuit(20) is formed with anti-electrostatic transistors. The output buffer(10) and the anti-electrostatic circuit(20) are formed with transistors of different types, respectively. The output buffer(10) has a pull-up transistor and a pull-down transistor connected between the first supply voltage and the second supply voltage. The anti-electrostatic transistors of the anti-electrostatic circuit(20) has a breakdown voltage lower than the breakdown voltage of the transistors of the output buffer.
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申请公布号 |
KR100312621(B1) |
申请公布日期 |
2001.10.10 |
申请号 |
KR19940026195 |
申请日期 |
1994.10.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, BYEONG JIN |
分类号 |
H03K19/00;(IPC1-7):H03K19/00 |
主分类号 |
H03K19/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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