Process of crystallizing semiconductor thin film and laser irradiation system

摘要

Laser beam irradiation for crystallizing semiconductor thin film (4) includes dividing the substrate surface in regions, crystallizing one of the division regions (D) and shifting the laser to the next region. Crystallizing semiconductor thin film (4) with a laser beam (50) includes: (i) dividing the surfaces of the substrate (O) into division regions (D) and shaping laser beam to adjust the irradiation region (R); (ii) irradiating one of the division regions while optically modulating the laser beam intensity, so cyclic light and dark pattern is projected on the irradiation region; and (iii) scanning to shift the irradiation region of the beam to the next division region; and repeating the crystallization for the division region. Independent claims are also included for: (I) the laser irradiation apparatus including shaper device, optical apparatus and primary and secondary scanner; (II) a thin film transistor which has a semiconductor thin film, a gate electrode and a gate insulating film; and (III) a display, particularly an organic electroluminescent display containing pixel electrodes with luminous portions and thin film transistors.