SILICON SINGLE CRYSTAL AND PRODUCTION METHOD FOR SILICON SINGLE CRYSTAL WAFER

摘要

A method for producing a silicon single crystal by a Czochralski method in order to provide a method capable of affording a wide defect free zone stably to a silicon single crystal wafer produced by a Czochralski method, wherein a ratio G outer/G center of an average value G of an in-crystal temperature gradient in a pulling axis direction within a temperature range, a silicon melting point to 1350 DEG C, at a crystal outer surface to that at a crystal center is set to 1.10 to 1.50. A method of producing a device wafer suitable for an efficient production, wherein a ratio between an OSF ring inner diameter and a crystal diameter, G1 x G2, and G1 edge/ G1 center are controlled to implement relations, (1.15≤ (G1 edge/G1 center)≤1.25) and (0.5<(OSF ring inner diameter/crystal diameter)<1.06 x (G1 x G2)<-0.2>), to thereby obtain a silicon single crystal having a gate oxide integrity at C mode yield of at least 60% and being free from dislocation. <IMAGE>