发明名称 SUBSTRATE FOR SINGLE CRYSTAL DIAMOND SYNTHESIS
摘要 <p>PROBLEM TO BE SOLVED: To provide a diamond synthesis substrate, which synthesizes single crystal diamond with high quality, at a low cost and in large area without the substrate being peeled and damaged. SOLUTION: In manufacturing the diamond synthesis substrate 10, a base 1, being composed of such single crystal as sapphire, magnesium oxide, and strontium titanate, is laminated with an intermediate layer 2 and an intermediate layer 3. On top of it, a film 4 of single crystal metal, such metal as platinum and iridium, is formed. The intermediate layer 2, being positioned between the base 1 and the single crystal metal 4, deliveries crystalline of the base 1 to the single crystal metal 4. The intermediate layer 3, being positioned between the intermediate layer 2 and the single crystal metal 4, is smaller in coefficient of linear thermal expansion and coefficient of carbon diffusion than the single crystal metal 4.</p>
申请公布号 JP2001278691(A) 申请公布日期 2001.10.10
申请号 JP20000093710 申请日期 2000.03.30
申请人 KOBE STEEL LTD 发明人 TACHIBANA TAKESHI
分类号 G02B1/10;C30B29/04;H01L33/34 主分类号 G02B1/10
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