发明名称 |
DEPOSITED FILM DEPOSITION METHOD AND DEPOSITED FILM DEPOSITION SYSTEM |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a deposited film deposition method and a deposited film deposition system in which an amorphous silicon deposited film of high quality having excellent uniformity over a large surface area can be deposited at high speed. SOLUTION: This film deposition method or system is composed of a discharge electrode in a vacuum vessel provided with an exhausting means a feeding unit for gaseous hydrogen and the gaseous raw material at least containing an Si element, and a supplying unit for high frequency electric power to the discharge electrode to make the gaseous raw material into plasma. While a film is deposited on a substrate in the vacuum vessel by a plasma CVD method, an auxiliary electrode is arranged in the plasma in the vacuum vessel, and periodically fluctuating voltage is applied on the auxiliary electrode without generating discharge so as to deposit the deposited film.</p> |
申请公布号 |
JP2001279455(A) |
申请公布日期 |
2001.10.10 |
申请号 |
JP20000091199 |
申请日期 |
2000.03.29 |
申请人 |
CANON INC |
发明人 |
KOIKE ATSUSHI;AOTA YUKITO;KANAI MASAHIRO;SUKAI HIROSHI |
分类号 |
C23C16/24;C23C16/509;H01J37/32;H01L21/205;H01L21/31;H01L31/04;(IPC1-7):C23C16/509 |
主分类号 |
C23C16/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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