Group III nitride compound semiconductor light-emitting device

摘要

A cap layer of GaN about 140 ANGSTROM thick and a p-type clad layer of Mg-doped p-type AlxGa1-xN (x=0.12)about 200 ANGSTROM thick are formed successively on an MQW active layer about 230 ANGSTROM thick. A p-type contact layer of Mg-doped p-type AlyGa1-yN (y=0.05) about 600 ANGSTROM thick is further formed thereon. These composition ratios x and y are selected to satisfy the expression "0.03