发明名称 |
Semiconductor switch driving circuit |
摘要 |
<p>To provide a semiconductor switch driving circuit in which stable continuity and disconnection can be kept, the high-speed switching operation is enabled, a lag of switching timing is minimized and which has a simple circuit, the semiconductor switch driving circuit for driving a semiconductor switch in which multistage switching devices (IGBT) are connected includes a transformer, a primary side and a secondary side and is configured so that voltage between the gate and the emitter of a switching device can be continuously kept positive, voltage between the gate and the emitter can be continuously kept negative, voltage between the gate and the emitter is alternately switched to positive voltage or negative voltage at high speed and can be kept. <IMAGE></p> |
申请公布号 |
EP1143619(A2) |
申请公布日期 |
2001.10.10 |
申请号 |
EP20010107205 |
申请日期 |
2001.03.22 |
申请人 |
NIHON KOHDEN CORPORATION |
发明人 |
AKIYAMA, NAOTO;INOMATA, MASAHIKO;TSUMURA, IKUHIRO |
分类号 |
H03K17/04;H02M1/08;H03K17/10;H03K17/56;H03K17/691;H03K17/785;(IPC1-7):H03K17/691;H03K17/725;H03K17/62;H03K17/61;H03K17/60;H03K17/687 |
主分类号 |
H03K17/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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