发明名称 Photoresist compositions and use of same
摘要 <p>Compositions and methods of the invention provide for a controlled flow of resist into device contact (via) holes during a post-exposure, post-development hard-bake step. Resists of the invention are positive-acting and contain one or more components that are preferably substantially stable (i.e. no substantial crosslinking) during: 1) soft-bake, pre-exposure thermal treatment to remove solvent carrier of the applied resist, and 2) post-exposure, pre-development thermal treatment to promote or enhance the acid-promoted reaction in exposed regions (typically a de-blocking reaction). However, resists of the invention will crosslink during a post-development more stringent thermal treatment (thermal flow hard-bake step).</p>
申请公布号 EP1143300(A1) 申请公布日期 2001.10.10
申请号 EP20010303145 申请日期 2001.04.02
申请人 SHIPLEY COMPANY LLC 发明人 ADAMS, TIMOTHY G.
分类号 G03F7/028;C08K5/00;C08L101/00;G03F7/004;G03F7/039;G03F7/40;H01L21/027;(IPC1-7):G03F7/039 主分类号 G03F7/028
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