发明名称 Method for forming a metal capacitor
摘要 A semiconductor wafer has a dielectric layer. A bottom plate recess is first formed in the dielectric layer, and a metal bottom plate is formed in the bottom plate recess. An insulation layer is formed on the metal bottom plate, and a via hole is formed in the insulation layer. A first metal layer is then formed on the insulation layer that fills the via hole so as to form a via plug. Finally, a metal upper plate is formed on the insulation layer, and a metal wire is formed on top of the via plug.
申请公布号 US6300189(B1) 申请公布日期 2001.10.09
申请号 US20000620239 申请日期 2000.07.20
申请人 UNITED MICROELECTRONICS CORP. 发明人 WU BING-CHANG
分类号 H01L21/02;H01L21/768;H01L27/08;(IPC1-7):H01L21/824 主分类号 H01L21/02
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