| 摘要 |
The invented method can be used to melt and recrystallize the source and drain regions of an integrated transistor device(s) using a laser, for example. The invented method counteracts shadowing and interference effects caused by the presence of the gate region(s) during annealing of the source and drain regions with radiant energy generated by a laser, for example. The invented method includes forming a radiant energy absorber layer over at least the gate region(s) of an integrated transistor device(s), and irradiating the radiant energy absorber layer with radiant energy to generate heat in the source and drain regions as well as in the radiant energy absorber layer. The heat generated in the radiant energy absorber layer passes through the gate region(s) to portions of source and drain regions of the integrated transistor device(s) adjacent the gate region(s). The thermal energy supplied from the radiant energy absorber layer to the portions of the source and drain regions adjacent the gate region(s) can be used to offset the radiant energy lost in these portions of the source and drain regions through shadowing and interference effects. The invention is also directed to an article that includes the radiant energy absorber layer.
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