| 摘要 |
A semiconductor device includes a semiconductor substrate with an active region, an oxide film that covers the active region of the semiconductor substrate, a first borophosphosilicate glass film that covers the oxide film, and a second borophosphosilicate glass film that covers the first insulating film. The first borophosphosilicate glass film has a boron concentration which is lower than that of the second borophosphosilicate glass film, and thus prevents out diffusion of phosphorus from the second borophosphosilicate glass film to the semiconductor substrate.
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