发明名称 |
Nonvolatile semiconductor memory device having a drain region of different impurity density and conductivity types |
摘要 |
A nonvolatile semiconductor memory device includes an n-type region which is in contact with n+ drain diffusion region at a surface of p-type silicon substrate and covers the periphery thereof. The device also includes a p-type impurity region which is in contact with n-type region and covers the periphery thereof. The n+ drain diffusion region, n-type region and p+ impurity region extend to region located immediately under the floating gate electrode. Thereby, the nonvolatile semiconductor memory device has a structure which can promote injection of high energy electrons along a gate electrode direction.
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申请公布号 |
US6300656(B1) |
申请公布日期 |
2001.10.09 |
申请号 |
US19960647532 |
申请日期 |
1996.05.15 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
UENO SHUICHI;KUSUNOKI SHIGERU;OKUMURA YOSHINORI |
分类号 |
H01L21/8247;H01L21/265;H01L21/336;H01L27/115;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):G11C11/34 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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