| 摘要 |
In a method of forming a polycrystalline silicon film, the polycrystalline silicon film is formed under film formation conditions of a film formation rate of 0.9rav to 1.1rav, where rav (nm/minute) is an average rate of forming the polycrystalline silicon film on each of a plurality of substrates on which oxide films are formed so as to provide the roughness of the interface between the oxide film on the substrate and the polycrystalline silicon film of less than 1 nm. As a result, it is possible to decrease the roughness of the interface between a gate oxide film and the polycrystalline silicon film and to improve reliability for ensuring the long-time use of the gate oxide film.
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