| 摘要 |
Provided with a solid state image sensor, which is adapted to simplify the process with enhancement of the morphology of the device and has photo-diodes formed on a semiconductor substrate, and transfer gates disposed around the photo-diodes to transfer signal charges generated from the photo-diodes, the solid state image sensor including: an insulating layer forming on the whole surface of the semiconductor substrate and having a contact hole exposing a defined portion of the transfer gates; a metal line formed to include the inside of the contact hole; and a light-shielding layer formed in the same layer with the metal line without overlapping the upper parts of the photo-diodes.
|
