| 摘要 |
A plurality of gate lines transmits scanning signals are formed on a substrate and a plurality of storage electrode lines are formed in parallel to the gate lines. The storage electrode lines and the gate lines are alternately arranged. A plurality of data lines transmitting image signals intersect the gate lines and the storage electrode lines with being insulated therefrom and a plurality of pixel electrodes are formed. The pixel electrode, which is connected to the thin film transistor which is turned on or off by the nth gate line 110, overlaps the nth and the (n-1)th storage electrode lines 210 which are respectively placed between the nth and the (n-1)th gate lines and between the (n-1)th and the (n 2)th gate lines, and the (n-1)th gate line 110. Therefore, abnormal electric field near the edges of the pixel electrodes is covered by the storage electrode lines and the gate lines.
|
