| 摘要 |
<p>PURPOSE:To simplify production processes without degrading display quality by making the thickness of signal holding capacitance electrodes smaller than the thickness of channel parts. CONSTITUTION:Silicon thin films 2 which are the channels of thin-film transistors and the signal holding capacitance electrodes 8 are formed of semiconductor materials by film formation and patterning on an insulating substrate 1 and thereafter, gate insulating films 3 consisting of silicon oxidized films are formed. Next, gate electrodes 4 consisting of a polycrystalline silicon material added with phosphorus are formed on the gate insulating films 3 of the parts where the channel regions are to be formed. The regions where the gate electrodes 4 do not exist above the silicon thin film 2 and the gate insulating films 3 existing on the regions of the signal holding capacitance electrodes 8 are etched and in succession, the signal holding capacitance electrodes 8 are etched until the thickness to permit sufficient transmission of visible light is attained. As a result, the stage for forming the signal holding capacitance electrodes 8 is simplified and the independent setting of the film thickness of the signal holding capacitance electrodes and the channel parts is possible.</p> |
