发明名称 Synchronous type semiconductor memory device permitting reduction in ratio of area occupied by control circuit in chip area
摘要 An address signal is transmitted to each bank by a common address bus. A column pre-decoder, and a row pre-decoder detect a selection of a corresponding bank in response to a signal transmitted by the address bus, and receive an address signal in response to a command signal from a command data bus. Circuits closer to the side of the address data bus and command data bus than to the circuit which latches the received data have a hierarchical power supply configuration.
申请公布号 US6301187(B1) 申请公布日期 2001.10.09
申请号 US19990226064 申请日期 1999.01.06
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 OOISHI TSUKASA;TOMISHIMA SHIGEKI
分类号 G11C11/401;G11C5/02;G11C5/14;G11C7/10;G11C8/10;G11C8/12;G11C8/14;G11C11/407;(IPC1-7):G11C8/00 主分类号 G11C11/401
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