发明名称 Positive photoresist composition and process for forming resist pattern
摘要 In a positive photoresist composition including (A) an alkali-soluble resin and (B) a photosensitizer, Ingredient (B) contains (B-1) a quinonediazide ester of, e.g., bis[2,5-dimethyl-3-(2-hydroxy-5-methylbenzyl)-4-hydroxyphenyl]methane or 2,4-bis[4-hydroxy-3-(4-hydroxybenzyl)-5-methylbenzyl]-6-cyclohexylphenol, and (B-2) a quinonediazide ester of, e.g., methyl gallate or 2,2-bis(2,3,4-trihydroxyphenyl)propane. The composition exhibits high sensitivity and definition, and improved focal depth range properties and underexposure margin.
申请公布号 US6300033(B1) 申请公布日期 2001.10.09
申请号 US19990318601 申请日期 1999.05.26
申请人 TOKYO OHKA KOGYO CO., LTD. 发明人 SUZUKI TAKAKO;DOI KOUSUKE;KOHARA HIDEKATSU;NAKAYAMA TOSHIMASA
分类号 G03F7/022;G03F7/20;H01L21/027;(IPC1-7):G03F7/023;G03F7/30 主分类号 G03F7/022
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