Method for patterning a buried oxide thickness for a separation by implanted oxygen (simox) process

摘要

A method of forming a patterned buried oxide film, includes performing an implantation into a substrate, forming a mask on at least portions of the substrate for controlling the implantation diffusion, and annealing the substrate to form a buried oxide. The mask may be selectively patterned. A region that is covered by the mask has a thinner buried oxide than an area which is exposed directly to the annealing ambient.