发明名称 Method for fabricating ferro-electric thin films using a sol-gel technique
摘要 A method is disclosed for the formation of ferro-electric films using a multi coating process based on a sol-gel technique. In particular a method is disclosed to fabricate high-quality thickness scaled PZT films of an alkoxide-type liquid chemical PZT precursor solution, preferably a Pb(ZrxTi1-x)O3 precursor solution, using a sol-gel technique. At least two coated layers are deposited, but the precise number of coated layers depends on the desired thickness of the ferro-electric film. According to the method of the invention, the electrical characteristics of the film as formed are not dependent on the number of coated layers. There are a number of properties, characteristic for the method of the present invention, and resulting in said excellent electrical characteristics. In fact said method can comprise a multi coating process wherein a reduced number of coated layers is used but where intermediate crystallization steps are performed. The ferro-electric films formed using this method have excellent electrical characteristics, provided that a crystallization step is only performed if the thickness of the film formed since the last crystallization step is minimum about 40 to 50 nm. Alternatively, the method can comprise a multi coating process wherein no intermediate crystallization steps are used.
申请公布号 US6300144(B1) 申请公布日期 2001.10.09
申请号 US19990255916 申请日期 1999.02.23
申请人 INTERUNIVERSITAIR MICRO ELECKTRONICA CENTRUM (IMEC YZW);LIMBURGS UNIVERSITAIR CENTRUM 发明人 WOUTERS DIRK;NORGA GERD;MAES HERMAN;NOUWEN RIA;MULLENS JULES;FRANCO DIRK;YPERMAN JAN;VAN POUCKE LUCIEN C.
分类号 C01G25/00;C23C18/12;H01L21/02;H01L21/314;H01L21/316;H01L21/8242;H01L27/10;H01L27/108;(IPC1-7):H01L21/00 主分类号 C01G25/00
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