Non-volatile memory device with row redundancy

摘要

A non-volatile memory device is organized with memory cells that are arranged by row and by column. The memory device includes a sector of matrix cells, row decoders and column decoders suitable to decode address signals and to activate respectively the rows or said columns, at least a sector of redundancy cells such that it is possible to substitute a row of the sector of matrix cells with a row of the sector of redundancy cells. The non-volatile memory device comprises a local column decoder for the matrix sector and a local column decoder for the redundancy sector. The local column decoders are controlled by external signals so that the row of the redundancy sector is activated simultaneously with the row of the matrix sector.