| 摘要 |
A semiconductor device evaluation apparatus for correctly measuring emission noise of a semiconductor device includes: an electromagnetic field measurement unit for measuring a two-dimensional electromagnetic field distribution in a plane parallel to an upper surface of a semiconductor device; a distribution image generation unit for not only extracting a distribution of an electromagnetic field higher than a threshold value determined in advance from the electromagnetic field distribution of the semiconductor device measured by the electromagnetic field measurement unit but converting the extracted electromagnetic field distribution to a distribution image in a two-dimensional plane; an image collation unit for collating the distribution image generated by the distribution image generation unit with a projected image, generated in advance, of an interconnect and a lead frame of the semiconductor device; and an emission source specifying unit for specifying an interconnect or a lead frame whose images are superposed, if the images of the electromagnetic field distribution, and the interconnects and lead frames are superposed on each other in collation by the image collation unit, as an emission source.
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