| 摘要 |
PROBLEM TO BE SOLVED: To improve the characteristics and reliability of a semiconductor device having a Cu film for wiring and an Al film for pad connected to the Cu film. SOLUTION: This semiconductor device has the Cu film 23 constituting a wiring layer, an intermediate layer formed on the film 23, and the Al film 34 which is formed on the intermediate layer and becomes a pad layer. The intermediate layer is composed of a first high-melting point metal film 33a, a high-melting point metal nitride film 33b formed on the film 33a, and a second high-melting point metal film 33c formed on the film 33b. |
