| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a element isolating trench structure, with which the recesses of an insulating film at corners of a trench formed on a semiconductor can be reduced and the element region size can be miniaturized to the limit of a photolithographic system. SOLUTION: A mask pattern 2, 3, 4 having an opening 5 in a semiconductor substrate is formed and used to form a trench 6 on the semiconductor. The opening 5 and the trench 6 are filled with a silicon oxide film 8. After the mask pattern is removed, a silicon oxide film 9 is further formed and etched back. A sidewall of the silicon oxide film 9 is provided on the sidewall of the silicon oxide film 8. After ion implantation to form a transistor in an element region 11, the silicon oxide film 10 on the element region is removed.
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