| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor method in which a double-recess structure can be formed with high reproducibility through a small number of lithographic steps. SOLUTION: This method of forming compound semiconductor comprises a first step of forming a buffer layer 102, a channel layer 103, a contact layer 104 on a semi-insulating semiconductor substrate 101, a second step of forming a resist mask 107 partially having an opening 107a on the contact layer 104, and a third step of forming a first recess structure R1 by performing isotropic etching through the opening 107a of the mask 107. This method also comprises a fourth step of forming a second recess structure R2, by performing anisotropic etching through the opening 107a.
|
