发明名称 |
DRY ETCHING METHOD, MICROMACHINING METHOD AND MASK FOR DRY ETCHING |
摘要 |
PROBLEM TO BE SOLVED: To provide a dry etching method required for micromachining a proper shape, a micromachining method and a mask for dry etching. SOLUTION: Etching is performed, using carbon monoxide gas added with a compound gas containing nitrogen as the reaction gas, and using a mask made of titanium oxide.
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申请公布号 |
JP2001274143(A) |
申请公布日期 |
2001.10.05 |
申请号 |
JP20000088633 |
申请日期 |
2000.03.28 |
申请人 |
TDK CORP |
发明人 |
HATTORI KAZUHIRO;UCHIYAMA KENJI |
分类号 |
C23F4/00;H01L21/302;H01L21/3065;H01L21/3213;(IPC1-7):H01L21/306 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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