| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a non-volatile memory transistor improved in the characteristics of the number of rewritable times and a producing method therefor. SOLUTION: A semiconductor device 1000 is provided with a memory transistor 100. The memory transistor 100 is provided with a wafer 10, floating gate 22 located on the wafer 10 while interposing a gate insulating layer 20, intermediate insulating layer 26 which can be functioned as a tunnel insulating layer in contact with at least one part of the floating gate 22, control gate 28 formed on the intermediate insulating layer 26, and impurity diffusing layers 14 and 16, which formed inside the wafer 10 and comprising a source area or drain area. The control gate 28 is provided with an amorphous silicon layer at least and the amorphous silicon layer contacts the intermediate insulating layer 26.
|
