| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which eliminates etching process and forms dual damascene wiring without having to use an etching stopper as an interlayer film. SOLUTION: A resist film 3 is applied to the first wiring 2 formed on a substrate 1 and is exposed to light by using a hole mask. A resist film 5, photosensitized by a wavelength which is different from the wavelength photosensitizing the resist film 3, is applied thereto and then is exposed to light by using a wiring mask. By developing the resist films 3, 5, a resist pattern having holes and wiring trench patterns are formed and then a metal film 8 is buried in the resist pattern. The extra buried metal is removed by chemical- mechanical polishing to form a plug and a wiring, and then the resist pattern is removed to form an interlayer insulating film which includes an exposed plug and wiring on the first wiring 2 and made of SOG on the substrate 1.
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