发明名称 APPARATUS FOR TREATING SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide an apparatus for treating a wafer, in which corrosion of waste fluid passage and leakage of ozone gas can be prevented by removing ozone from used solution containing ozone. SOLUTION: Multiple balls 33 of aluminum oxide are contained in an ozone decomposition chamber 31 and a detour 43, such that they do not impede conduction of used solution. Used solution discharged from a treating unit 2 touches the surface of aluminum oxide balls 33 to decompose ozone contained in the used solution efficiently. Consequently, highly reactive ozone scarcely remain in the used solution discharged from a discharge section 36.
申请公布号 JP2001274136(A) 申请公布日期 2001.10.05
申请号 JP20000085831 申请日期 2000.03.27
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 HAYASHI TOKUYUKI
分类号 C02F1/58;C03C23/00;H01L21/304;(IPC1-7):H01L21/304 主分类号 C02F1/58
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