| 摘要 |
PROBLEM TO BE SOLVED: To increase the diameter of the crystal grain of a crystal semiconductor film that is manufactured by a laser crystallization method, and to manufacture a TFT by the crystal semiconductor film for obtaining reliability that is equal to that of a MOS transistor. SOLUTION: To increase the diameter of a crystal grain of the crystal semiconductor film that is manufactured by the laser crystallization method, a heat- insulating barrier is formed between the semiconductor film and a substrate to reduce the outflow speed of heat, and the cooling process of the semiconductor film that is heated by applying a laser beam is moderated. Crystal growth distance is proportional to the product of growth time and speed, thus moderating the cooling speed, lengthening the growth time, and hence increasing the diameter of the crystal grain.
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