| 摘要 |
PROBLEM TO BE SOLVED: To enable an excellent integrated circuit pattern to be formed when an semiconductor is manufactured by a method wherein a BARL film is made to display its function sufficiently, and the BARL film is improved in bonding properties to a resist film. SOLUTION: A semiconductor manufacturing process comprises a first process in which an antireflection film is formed on a substrate, a second process in which an oxide film is formed on the antireflection film, and a third process in which resist is applied onto the oxide film.
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