发明名称 SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To shorten an access time by unnecessitating insertion of read-out access to a transient period which is performed because there is a possibility of rewriting the data of an address to which no write-in-access is intended at the transient period of change in an address signal when an externally specified address is changed. SOLUTION: A circuit 30 for forcibly changing an operation state changes an internal circuit operation into a read-out operation state when the change of an address signal is detected by an address transition detecting circuit 10, a write-in signal (WE bar) is in a L state and write-in access is externally specified. Thereby insertion of read-out access for the transient period can be unnecessitated.
申请公布号 JP2001273772(A) 申请公布日期 2001.10.05
申请号 JP20000091279 申请日期 2000.03.29
申请人 KAWASAKI STEEL CORP 发明人 KATO TOMOAKI
分类号 G11C11/41;(IPC1-7):G11C11/41 主分类号 G11C11/41
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