| 摘要 |
PROBLEM TO BE SOLVED: To prevent faulty operations or reduction in yield, even when a wiring layer is formed using Cu. SOLUTION: An underlying wiring layer 102 is formed on a surface of a semiconductor substrate 101. An SiO2 film 103, an Si3N4 film 104 and an SiO2 film 105 are then sequentially deposited thereon, and a through-hole 106 and a wring groove 107 are made therein. Next, a Ti film 108 is deposited by a physical vapor phase growth method, a TiCN film 109 is deposited by a chemical vapor phase growth process, and the surface of the film 109 is exposed to N2 plasma to form a TiN film 110. Subsequently, a Ta film 111 is deposited by the physical vapor phase growth process on a surface of the film 110, a Cu film 112 is deposited by the physical vapor phase growth process on a surface of the Ta film 111, and then a Cu film 113 is deposited by electroplating on a surface of the Cu film 112. Finally, a metal film on the SiO2 film 105 is removed by chemical-mechanical polishing.
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