| 发明名称 |
MANUFACTURING METHOD OF FeSi2 |
| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of FeSi2 that can prevent carbon contamination, and at the same time has superior mass productivity. SOLUTION: In this manufacturing method of FeSi2, the halide of Fe is allowed to react with the halide of Si or a hydride, and FeSi2 30 is subjected to vapor epitaxial growth on a seed crystal 10.
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| 申请公布号 |
JP2001274098(A) |
申请公布日期 |
2001.10.05 |
| 申请号 |
JP20000085170 |
申请日期 |
2000.03.24 |
| 申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
SEKI HISASHI;KOKETSU AKINORI;KUMAGAI YOSHINAO;MIURA YASUNORI;TAKEMOTO KIKUROU;MOTOKI KENSAKU |
| 分类号 |
C30B25/02;C30B29/52;H01L21/205;(IPC1-7):H01L21/205 |
主分类号 |
C30B25/02 |
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